Description: 150 Infineon 200W Enhancement Mode High-Power P-Ch MOSFETS. 40A, Continuous This is a lot of 150 Infineon 200W High-Power P-Ch MOSFETS. Enhancement Mode, 40A, Continuous Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 60 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 120 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 200 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon / IR Configuration: Single Height: 15.65 mm Length: 10 mm Product Type: MOSFET 1000 Subcategory: MOSFETs Transistor Type: 1 P-Channel Width: 4.4 mm Part # Aliases: IRF5210PBF SP001559642 Unit Weight: 0.068784 oz We’re e-liquidators. We specialize in Military, Government, Industrial and Business liquidation services, disposition and asset recovery management. Our surplus inventory comes to us from many sources, big and small: corporate clients, closing businesses, military DRMO’s, and local government agencies, and individuals. Feel free to contact us with your questions, concerns and suggestions. Contact information:We are "E-liquidators" on Facebook Google “E-liquidators” for additional informationPlease take a moment to see our current specials on eBay our other eBay listings. Powered by SixBit's eCommerce Solution
Price: 79.97 USD
Location: San Jose, California
End Time: 2024-01-04T22:55:20.000Z
Shipping Cost: 0 USD
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All returns accepted: ReturnsNotAccepted
Brand: Infineon
MPN: IRF5210PBF
